Compound Semiconductor

Quashing parasitics in RF GaN-on-silicon HEMTs

Atomera’s oxygen-based epitaxial technology is addressing problematic parasitic channels in GaN-on-silicon HEMTs. Facing a ...
Elektronik Net

Driving GaN HEMTs as Simple as Silicon MOSFETs

Currently available GaN technologies have their shortcomings. These are discussed in the following article followed by the presentation of a novel GaN technology that eliminates these shortcomings.
Nature

Interference effects in GaN high electron mobility transistor power amplifier induced by microwave pulses

The unique material properties of gallium nitride (GaN), wide bandgap, high thermal conductivity, high breakdown voltage, high electron mobility and the device properties of GaN High electron mobility ...
EDN

GaN fundamentals: Hybrid structures, HEMT, and substrate choices

Part 1 of this article series on gallium nitride (GaN) fundamentals described crystal structures and the formation of the two-dimensional electron gas (2DEG), along with material figures of merit and ...
EDN

Drain-Current Characteristics of Enhancement-Mode GaN HEMTs

Two distinct structures have been developed for the enhancement mode of GaN-based high-electron–mobility transistors (HEMTs). These two modes are the metal-insulator–semiconductor (MIS) structure, 2 ...
Compound Semiconductor

IVWorks reGaN tech enables World's first 742GHz GaN HEMT

A GaN HEMT incorporating the Korean company IVWorks' proprietary reGaN selective regrowth technology has become the world's ...
Semiconductor Engineering

Improving GaN Device Architectures

As the universe of applications for power devices grows, designers are finding that no single semiconductor can cover the full range of voltage and current requirements. Instead, combination circuits ...
AZOM

How To Measure High Aspect Ratio HEMT Vias Non-Destructively Using 3D Optical Profiling

Wide bandgap semiconductor materials are highly useful in power electronics due to their ability to work at high temperatures, power, and frequency. Gallium nitride (GaN) is a wide bandgap ...
Nature

High Temperature Terahertz Detectors Realized by a GaN High Electron Mobility Transistor

With the development of terahertz (THz) technologies, a compact, high speed, and highly sensitive detector working at sub-THz and THz ranges is highly desirable 1,2,3,4,5,6. Field-effect transistors ...
Semiconductor Engineering

Driving Cost Lower and Power Higher With GaN

Gallium nitride is starting to make broader inroads in the lower-end of the high-voltage, wide-bandgap power FET market, where silicon carbide has been the technology of choice. This shift is driven ...
Electronic Design

GaN HEMTs Bring Low-Noise Power to Switching Apps

What are GaN HEMTs and why are they important? How GaN devices can handle kilowatt power conversion. Gallium-nitride (GaN) high electron mobility transistors (HEMTs) are a form of field-effect ...
Electronics Weekly

Advantages of GaN-on-Si HEMT for 5G mm-wave range

Researchers at Soitec and Nanyang Technological University have reported 60%+ power-added efficiency (PAE), for moderately scaled GaN-on-Si HEMTs at 30GHz operation. The devices also perform with ...