GOLETA, Calif.--(BUSINESS WIRE)--Transphorm, Inc. (Nasdaq: TGAN) — a pioneer in and a global supplier of high reliability, high performance gallium nitride (GaN) power conversion products — announced ...
GaN based HEMTs (high electron mobility transistors) offer efficiency, density and cost advantages compared with silicon based devices. These features should result in widespread adoption of GaN ...
Navitas Semiconductor has announced that its high-power GaNSafe ICs have achieved automotive qualification under the AEC-Q100 and AEC-Q101 standards, marking a significant advancement in gallium ...
Efficient Power Conversion (EPC) released its Phase 18 Reliability Report, which describes updated approaches for evaluating eGaN device reliability across application mission profiles. The report ...
EPC, the leader in GaN, announces the release of its Phase 17 Reliability Report, further solidifying GaN’s position as a highly reliable technology. The latest reliability report introduces expanded ...
HILLSBORO, Ore. & RICHARDSON, Texas--(BUSINESS WIRE)--TriQuint Semiconductor, Inc. (NASDAQ: TQNT), a leading RF products manufacturer and foundry services provider, has achieved record-setting gallium ...
EL SEGUNDO, CA, UNITED STATES, February 26, 2026 /EINPresswire.com/ — Efficient Power Conversion (EPC), the world leader in enhancement-mode gallium nitride (eGaN ...