This two part article compares the switching and conduction loss performance of the latest generation of punch-through (PT) IGBTs with power MOSFETs. Also included is a brief overview of the PT IGBT ...
IGBT, stands for Insulated Gate Bipolar Transistor. It is a bipolar transistor with an insulated gate terminal. It combines a control input with a MOS structure and a bipolar power transistor in a ...
Automotive systems traditionally have had no need for the high-voltage performance of insulated gate bipolar transistors (IGBTs). However, new developments in conventional and electric vehicles are ...
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