Tech Xplore on MSN

Low-power, flexible radio-frequency transistors break 100 GHz barrier

Over the past decades, electronics engineers worldwide have been trying to develop devices that could enable even faster ...
Hosted on MSN

Researchers achieve record-breaking RF GaN-on-Si transistor performance for high-efficiency 6G power amplifiers

Imec researchers have set a new benchmark in RF transistor performance for mobile applications. They present a gallium nitride (GaN) MOSHEMT (metal-oxide-semiconductor high-electron-mobility ...
EDN

New Infineon LDMOS RF Power Transistors Target 2.5 to 2.7 GHz WiMAX, Wireless Broadband Applications with Industry-Best Peak Output Power

New Infineon LDMOS RF Power Transistors Target 2.5 to 2.7 GHz WiMAX, Wireless Broadband Applications with Industry-Best Peak Output Power Infineon Technologies AG (IFX: FSE, NYSE), a leading supplier ...
EDN

RF power transistors are based on LDMOS

The MRFE6S9046N, MRF8S9100H/HS, and MRF8S18120H/HS high-performance RF power transistors, are based on laterally diffused metal oxide semiconductor (LDMOS) technology, and incorporate enhancements ...
Electronic Design

Cool RF Transistors Pack A Mean Punch

Power-Amplifier (PA) and base-station manufacturers are faced with a series of similar problems. They both have a common interest in keeping base stations cool and minimizing cost. And they each have ...