Renesas Electronics has introduced what is claims is the industry’s first bidirectional switch using depletion-mode (d-mode) ...

Renesas Electronics Corporation, a premier supplier of advanced semiconductor solutions, introduced the industry’s first ...

GaN-Based HWLLC Converter Topology Sets New Power Density and Peak Efficiency Benchmarks for Next-Generation Computing ...

Renesas unveils what it claims is the industry’s first bidirectional switch based on depletion‑mode GaN technology.

India’s deep-tech ecosystem continues to gain momentum as Agnit Semiconductors, an advanced semiconductor startup incubated ...

ARMS three-phase inverter platform built around the Gen-7 EPC2366 eGaN® power transistor, showcased at EPC’s booth ...

CAMBRIDGE, England--(BUSINESS WIRE)--Cambridge GaN Devices (CGD), the fabless, clean-tech semiconductor company that develops energy-efficient GaN-based power devices that make greener electronics ...

Infineon Technologies (OTCQX:IFNNY) on Wednesday said it is looking to grab a share of the growing gallium nitride (GaN) market with the development of a new technology, that could help in bringing ...

Infineon Technologies has announced the development of the world's first 300mm power gallium nitride (GaN) wafer technology. The company claims to be the first to effectively implement this ...

The "The Global RF GaN Market 2026-2036" has been added to ResearchAndMarkets.com's offering. The global Radio Frequency Gallium Nitride (RF GaN) market is experiencing robust expansion, driven by the ...

Japan-based Rohm Semiconductor and Taiwan Semiconductor Manufacturing Company (TSMC) have announced a strategic partnership to advance the development and mass production of gallium nitride (GaN) ...

First-of-its-kind bidirectional GaN technology with DC blocking dramatically reduces switch count needed for power conversion ...